APTGL325A120D3G Microsemi Power Products Group, APTGL325A120D3G Datasheet - Page 5
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APTGL325A120D3G
Manufacturer Part Number
APTGL325A120D3G
Description
IGBT4 PHASE LEG 1200V 420A D3
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGL325A120D3G.pdf
(5 pages)
Specifications of APTGL325A120D3G
Igbt Type
Trench and Field Stop
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.2V @ 15V, 300A
Current - Collector (ic) (max)
420A
Current - Collector Cutoff (max)
5mA
Input Capacitance (cies) @ Vce
18.6nF @ 25V
Power - Max
1500W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
D3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
180
150
120
90
60
30
0
0.18
0.15
0.12
0.09
0.06
0.03
Operating Frequency vs Collector Current
0.00001
0
0
switching
Hard
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.1
0.3
0.05
120
ZCS
0.0001
ZVS
I
240
C
(A)
Diode
V
D=50%
R
T
Tc=75°C
360
CE
J
G
=150°C
=1.5 Ω
=600V
Rectangular Pulse Duration in Seconds
0.001
480
Single Pulse
www.microsemi.com
0.01
APTGL325A120D3G
600
450
300
150
0
0
0.1
Forward Characteristic of diode
0.4
T
J
=150°C
0.8
V
1.2
F
1
(V)
T
J
=25°C
1.6
2
10
2.4
5 - 5