APTGT30A60T1G Microsemi Power Products Group, APTGT30A60T1G Datasheet - Page 5

• Manufacturer Part Number: APTGT30A60T1G
• Description: IGBT MODULE TRENCH PHASE LEG SP1
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT30A60T1G

• Igbt Type: Trench and Field Stop
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.9V @ 15V, 30A
• Current - Collector (ic) (max): 50A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 1.6nF @ 25V
• Power - Max: 90W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
2.5
1.5
0.5
120
100
0.00001
80
60
40
20
3
2
1
0
0
Operating Frequency vs Collector Current
0
0.5
0.3
0.9
0.1
0.7
ZVS
0.05
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
switching
Hard
10
ZCS
0.0001
I
C
20
(A)
V
D=50%
R
T
T
J
c
30
CE
G
=150°C
=85°C
=10Ω
Rectangular Pulse Duration in Seconds
=300V
0.001
www.microsemi.com
Single Pulse
Diode
40
0.01
60
50
40
30
20
10
0
0
APTGT30A60T1G
0.1
Forward Characteristic of diode
T
0.4
J
=150°C
T
0.8
J
=125°C
V
1.2
F
1
(V)
T
J
=25°C
1.6
2
10
2.4
5 – 5