APTGF25A120T1G Microsemi Power Products Group, APTGF25A120T1G Datasheet
APTGF25A120T1G
Specifications of APTGF25A120T1G
Related parts for APTGF25A120T1G
APTGF25A120T1G Summary of contents
Page 1
... NTC 4 • 12 • • Benefits • • • • • • Parameter www.microsemi.com APTGF25A120T1G V = 1200V CES I = 25A @ Tc = 80°C C Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current ...
Page 2
... Reverse diode ratings and characteristics Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTGF25A120T1G = 25°C unless otherwise specified j Test Conditions T = 25° 1200V T = 125° 25°C V =15V ...
Page 3
... T: Thermistor temperature 25 Thermistor value − B 25 www.microsemi.com APTGF25A120T1G Min Typ Max IGBT 0.6 Diode 1.4 2500 -40 150 -40 125 -40 100 M4 2.5 4.7 80 Min Typ Max 50 3952 Unit °C/W V °C N ...
Page 4
... Junction Temperature (°C) J =15V =125° =125° =25°C J 7.5 10 12.5 15 Ic=50A Ic=25A Ic=12. 100 125 www.microsemi.com APTGF25A120T1G Output Characteristics (V =10V 250µs Pulse Test < 0.5% Duty cycle 12 T =25° =125° 0.5 1 1 Collector to Emitter Voltage (V) CE Gate Charge 25A V =240V ...
Page 5
... Collector to Emitter Current (A) CE Switching Energy Losses vs Gate Resistance 600V 15V Eon, 25A 125° Eoff, 25A Gate Resistance (Ohms) APTGF25A120T1G Turn-Off Delay Time vs Collector Current 400 350 300 250 V = 600V 22Ω G 200 Collector to Emitter Current (A) CE Current Fall Time vs Collector Current 125° 25° ...
Page 6
... U.S and Foreign patents pending. All Rights Reserved. Cies Coes Cres Single Pulse 0.001 0.01 Rectangular Pulse Duration (Seconds) www.microsemi.com APTGF25A120T1G Operating Frequency vs Collector Current 120 V = 600V 50% 100 R = 22Ω 125°C ...