APTGT20H60T1G Microsemi Power Products Group, APTGT20H60T1G Datasheet - Page 5
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APTGT20H60T1G
Manufacturer Part Number
APTGT20H60T1G
Description
IGBT MOD TRENCH FULL BRIDGE SP1
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGT20H60T1G.pdf
(5 pages)
Specifications of APTGT20H60T1G
Igbt Type
Trench and Field Stop
Configuration
Full Bridge Inverter
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.9V @ 15V, 20A
Current - Collector (ic) (max)
32A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
1.1nF @ 25V
Power - Max
62W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
3.5
2.5
1.5
0.5
120
100
0.00001
80
60
40
20
3
2
1
0
0
Operating Frequency vs Collector Current
0
ZCS
0.5
0.3
0.9
0.1
0.7
0.05
switching
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Hard
5
ZVS
10
0.0001
I
C
15
(A)
20
V
D=50%
R
T
T
J
c
CE
G
=150°C
=85°C
=12Ω
Rectangular Pulse Duration in Seconds
=300V
0.001
25
www.microsemi.com
Single Pulse
Diode
30
0.01
40
35
30
25
20
15
10
5
0
0
APTGT20H60T1G
0.1
Forward Characteristic of diode
T
0.4
J
=150°C
T
0.8
J
=125°C
V
1.2
F
1
(V)
T
J
=25°C
1.6
2
10
2.4
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