APTGT20H60T1G Microsemi Power Products Group, APTGT20H60T1G Datasheet - Page 5

• Manufacturer Part Number: APTGT20H60T1G
• Description: IGBT MOD TRENCH FULL BRIDGE SP1
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT20H60T1G

• Igbt Type: Trench and Field Stop
• Configuration: Full Bridge Inverter
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.9V @ 15V, 20A
• Current - Collector (ic) (max): 32A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 1.1nF @ 25V
• Power - Max: 62W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
3.5
2.5
1.5
0.5
120
100
0.00001
80
60
40
20
3
2
1
0
0
Operating Frequency vs Collector Current
0
ZCS
0.5
0.3
0.9
0.1
0.7
0.05
switching
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Hard
5
ZVS
10
0.0001
I
C
15
(A)
20
V
D=50%
R
T
T
J
c
CE
G
=150°C
=85°C
=12Ω
Rectangular Pulse Duration in Seconds
=300V
0.001
25
www.microsemi.com
Single Pulse
Diode
30
0.01
40
35
30
25
20
15
10
5
0
0
APTGT20H60T1G
0.1
Forward Characteristic of diode
T
0.4
J
=150°C
T
0.8
J
=125°C
V
1.2
F
1
(V)
T
J
=25°C
1.6
2
10
2.4
5 – 5