APTGF50DA120T1G Microsemi Power Products Group, APTGF50DA120T1G Datasheet - Page 4

• Manufacturer Part Number: APTGF50DA120T1G
• Description: IGBT 1200V 75A 312W SP1
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF50DA120T1G

• Igbt Type: NPT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 50A
• Current - Collector (ic) (max): 75A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 3.45nF @ 25V
• Power - Max: 312W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
250
200
150
100
160
120
50
80
40
0
9
8
7
6
5
4
3
2
1
0
0
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0
9
0
On state Voltage vs Gate to Emitter Volt.
T
250µs Pulse Test
< 0.5% Duty cycle
250µs Pulse Test
< 0.5% Duty cycle
25
Breakdown Voltage vs Junction Temp.
250µs Pulse Test
< 0.5% Duty cycle
V
J
= 25°C
V
CE
10
GE
, Collector to Emitter Voltage (V)
Output characteristics (V
V
, Gate to Emitter Voltage (V)
T
GE
J
, Junction Temperature (°C)
4
, Gate to Emitter Voltage (V)
2
Transfer Characteristics
11
50
T
J
=125°C
T
12
J
=25°C
8
4
75
13
T
J
=25°C
14
GE
12
100
T
6
J
T
=15V)
=125°C
J
Ic=100A
=25°C
Ic=50A
Ic=25A
15
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125
16
16
8
APTGF50DA120T1G
18
16
14
12
10
70
60
50
40
30
20
10
40
30
20
10
0
8
6
4
2
0
6
5
4
3
2
1
0
0
25
25
0
0
DC Collector Current vs Case Temperature
On state Voltage vs Junction Temperature
250µs Pulse Test
< 0.5% Duty cycle
V
I
T
C
CE
J
= 50A
Output Characteristics (V
= 25°C
50
, Collector to Emitter Voltage (V)
T
50
J
, Junction Temperature (°C)
T
50
C
1
100
, Case Temperature (°C)
Gate Charge (nC)
Gate Charge
75
150
75
V
T
2
CE
J
=25°C
200
=600V
100
250µs Pulse Test
< 0.5% Duty cycle
V
GE
= 15V
V
250
GE
CE
100
T
=10V)
=240V
3
J
125
V
=125°C
Ic=100A
Ic=25A
CE
Ic=50A
300
=960V
125
350
150
4
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