APT100GT60JRDQ4 Microsemi Power Products Group, APT100GT60JRDQ4 Datasheet - Page 4

• Manufacturer Part Number: APT100GT60JRDQ4
• Description: IGBT 600V 148A 500W SOT227
• Manufacturer: Microsemi Power Products Group
• Series: Thunderbolt IGBT®r

Specifications of APT100GT60JRDQ4

• Igbt Type: NPT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 100A
• Current - Collector (ic) (max): 148A
• Current - Collector Cutoff (max): 50µA
• Input Capacitance (cies) @ Vce: 5.15nF @ 25V
• Power - Max: 500W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT100GT60JRDQ4MI; APT100GT60JRDQ4MI

Typical Performance Curves
FIGURE 15, Switching Energy Losses vs. Gate Resistance
16000
14000
12000
10000
35000
30000
25000
20000
15000
10000
8000
6000
4000
2000
5000
FIGURE 13, Turn-On Energy Loss vs Collector Current
250
200
150
100
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 9, Turn-On Delay Time vs Collector Current
35
30
25
20
15
10
50
5
0
0
0
0
I
I
CE
CE
I
0
0
0
0
CE
V
V
T
V
T
R
L = 100µH
V
V
R
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
CE
GE
J
R
CE
GE
J
G
CE
G
, COLLECTOR TO EMITTER CURRENT (A)
= 125°C
G
= 25°C
= 4.3Ω
25
25
25
= 4.3Ω
= 400V
= +15V
= 400V
= +15V
= 400V
=
R
4.3Ω, L
G
E
10
, GATE RESISTANCE (OHMS)
50
50
50
off,
,
or 125°C
200A
V
GE
75 100 125 150 175 200 225
=
75 100 125 150 175 200 225
75 100 125 150 175 200 225
100
T
= 15V
20
T
J
E
µ
J
=
H, V
on2,
=
25 or 125°C,V
125°C
T
50A
CE
E
J
on2,
=
=
30
25°C
100A
400V
E
off,
50A
E
GE
on2,
40
=
200A
E
15V
off,
100A
50
FIGURE 16, Switching Energy Losses vs Junction Temperature
12000
10000
16000
14000
12000
10000
FIGURE 14, Turn Off Energy Loss vs Collector Current
8000
6000
4000
2000
8000
6000
4000
2000
450
400
350
300
250
200
150
100
FIGURE 10, Turn-Off Delay Time vs Collector Current
200
180
160
140
120
100
FIGURE 12, Current Fall Time vs Collector Current
50
80
60
40
20
0
0
0
0
I
I
CE
CE
I
0
0
0
0
CE
V
V
R
V
V
R
E
E
V
R
L = 100µH
E
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
R
CE
GE
G
CE
GE
G
on2,
off,
CE
G
, COLLECTOR TO EMITTER CURRENT (A)
off,
V
G
= 4.3Ω
= 4.3Ω
25
25
25
GE
=
= 400V
= 400V
= +15V
50A
T
= +15V
=
200A
=
100A
J
4.3Ω
=15V,T
400V
4.3Ω, L
, JUNCTION TEMPERATURE (°C)
T
25
50
50
50
J
T
=
J
125°C, V
J
=
=25°C
=
75 100 125 150 175 200 225
75 100 125 150 175 200 225
70 100 125 150 175 200 225
25°C, V
100
E
50
on2,
µ
H, V
GE
50A
GE
T
V
J
T
=
CE
GE
J
=
=
15V
=
125°C
=
=15V,T
15V
E
75
25°C
on2,
400V
APT100GT60JRDQ4
200A
J
=125°C
100
E
off,
100A
125