APTGT30DA170T1G Microsemi Power Products Group, APTGT30DA170T1G Datasheet - Page 4
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APTGT30DA170T1G
Manufacturer Part Number
APTGT30DA170T1G
Description
IGBT 1700V 45A 210W SP1
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGT30DA170T1G.pdf
(5 pages)
Specifications of APTGT30DA170T1G
Igbt Type
Trench and Field Stop
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1700V
Vce(on) (max) @ Vge, Ic
2.4V @ 15V, 30A
Current - Collector (ic) (max)
45A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
2.5nF @ 25V
Power - Max
210W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Typical Performance Curve
60
50
40
30
20
10
60
50
40
30
20
10
80
60
40
20
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
Switching Energy Losses vs Gate Resistance
0
0.00001
0
0
0
5
0
V
V
I
T
C
0.5
CE
GE
J
= 30A
Output Characteristics (V
T
= 125°C
0.05
0.5
0.3
J
0.7
0.9
0.1
= 900V
=15V
=125°C
20
6
Transfert Characteristics
Gate Resistance (ohms)
1
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
40
7
1.5
0.0001
V
T
V
J
CE
=25°C
GE
60
2
T
8
(V)
J
=25°C
(V)
2.5
80
9
T
T
GE
J
3
J
=125°C
=125°C
=15V)
Eon
100
0.001
rectangular Pulse Duration (Seconds)
10
3.5
Eoff
Er
www.microsemi.com
Single Pulse
120
4
11
IGBT
0.01
APTGT30DA170T1G
70
60
50
40
30
20
10
40
35
30
25
20
15
10
0
60
50
40
30
20
10
5
0
0
0
0
0
V
T
R
V
V
R
T
GE
J
G
T
Energy losses vs Collector Current
Reverse Bias Safe Operating Area
J
CE
GE
G
=125°C
=18 Ω
J
= 125°C
0.1
=15V
= 18 Ω
= 900V
= 15V
= 125°C
400
20
1
Output Characteristics
V
40
GE
800
2
=19V
I
V
C
CE
V
(A)
CE
(V)
Eon
1
(V)
60
V
1200
GE
3
=13V
Er
V
V
Eoff
GE
GE
80
=9V
=15V
4
1600
10
100
5
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