APT40GP90JDQ2 Microsemi Power Products Group, APT40GP90JDQ2 Datasheet - Page 5

• Manufacturer Part Number: APT40GP90JDQ2
• Description: IGBT 900V 64A 284W SOT227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT40GP90JDQ2

• Igbt Type: PT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 900V
• Vce(on) (max) @ Vge, Ic: 3.9V @ 15V, 40A
• Current - Collector (ic) (max): 64A
• Current - Collector Cutoff (max): 350µA
• Input Capacitance (cies) @ Vce: 3.3nF @ 25V
• Power - Max: 284W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT40GP90JDQ2MI; APT40GP90JDQ2MI

Case temperature. (°C)
TYPICAL PERFORMANCE CURVES
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
Figure 17, Capacitance vs Collector-To-Emitter Voltage
7,000
1,000
Junction
temp. (°C)
0.50
0.40
0.30
0.20
0.10
500
100
V
50
10
CE
0
10
(Watts)
0
Power
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
-5
D = 0.9
10
0.05
0.7
0.5
0.3
0.1
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
RC MODEL
20
10
-4
0.0940
0.204
0.142
30
40
RECTANGULAR PULSE DURATION (SECONDS)
C
C
C
oes
10
ies
res
0.0117
0.136
1.07
-3
50
SINGLE PULSE
10
-2
140
100
Figure 20, Operating Frequency vs Collector Current
50
10
5
1
10
T
T
D = 50 %
V
R
J
C
CE
G
= 125
= 75
= 4.3Ω
180
160
140
120
100
= 600V
Figure 18,Minimim Switching Safe Operating Area
80
60
40
20
0
°
I
°
20
C
C
0
C
V
, COLLECTOR CURRENT (A)
CE
10
-1
, COLLECTOR TO EMITTER VOLTAGE
200
30
Note:
400
Peak T J = P DM x Z θJC + T C
40
Duty Factor D =
1.0
t 1
600
50
t 2
800
t 1
60
APT40GP90JDQ2
/
t 2
F
f
f
P
max1
max2
max
diss
1000
10
= min (f
=
=
=
t
T
d(on)
P
E
R
J
diss
on2
θJC
- T
max
+ t
- P
+ E
C
0.05
r
cond
, f
+ t
off
max2
d(off)
)
+ t
f