APTGF50DH60T1G Microsemi Power Products Group, APTGF50DH60T1G Datasheet - Page 4
APTGF50DH60T1G
Manufacturer Part Number
APTGF50DH60T1G
Description
IGBT NPT BRIDGE 600V 65A SP1
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGF50DH60T1G.pdf
(7 pages)
Specifications of APTGF50DH60T1G
Igbt Type
NPT
Configuration
Asymmetrical Bridge
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.45V @ 15V, 50A
Current - Collector (ic) (max)
65A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
2.2nF @ 25V
Power - Max
250W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Typical IGBT Performance Curve
100
150
125
100
75
50
25
75
50
25
0
0
1.20
1.10
1.00
0.90
0.80
0
0
250µs Pulse Test
< 0.5% Duty cycle
250µs Pulse Test
< 0.5% Duty cycle
V
25
CE
1
Output characteristics (V
Breakdown Voltage vs Junction Temp.
, Collector to Emitter Voltage (V)
V
GE
T
2
J
, Gate to Emitter Voltage (V)
, Junction Temperature (°C)
Transfer Characteristics
1
T
T
J
3
50
=25°C
J
=25°C
4
T
J
=125°C
2
5
75
6
GE
7
T
=15V)
3
100
J
=125°C
8
9
www.microsemi.com
125
10
4
APTGF50DH60T1G
100
70
60
50
40
30
20
10
18
16
14
12
10
75
50
25
0
8
6
4
2
0
0
25
0
DC Collector Current vs Case Temperature
0
250µs Pulse Test
< 0.5% Duty cycle
I
T
V
C
J
Output Characteristics (V
25
CE
= 50A
= 25°C
, Collector to Emitter Voltage (V)
50
T
C
50
, Case Temperature (°C)
1
Gate Charge (nC)
V
Gate Charge
75
75
CE
=300V
100 125 150 175 200
T
V
J
2
CE
=25°C
=120V
100
GE
=10V)
T
3
125
J
V
=125°C
CE
=480V
150
4
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