APTGT20H60T3G Microsemi Power Products Group, APTGT20H60T3G Datasheet - Page 4

• Manufacturer Part Number: APTGT20H60T3G
• Description: IGBT MOD TRENCH FULL BRIDGE SP3
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT20H60T3G

• Igbt Type: Trench and Field Stop
• Configuration: Full Bridge Inverter
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.9V @ 15V, 20A
• Current - Collector (ic) (max): 32A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 1.1nF @ 25V
• Power - Max: 62W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
40
35
30
25
20
15
10
40
35
30
25
20
15
10
1.5
0.5
Switching Energy Losses vs Gate Resistance
2.8
2.4
1.6
1.2
0.8
0.4
5
0
5
0
0.00001
1
0
2
0
0
5
10
V
V
I
T
C
CE
GE
J
= 20A
0.7
0.1
T
0.9
0.5
0.3
= 150°C
Output Characteristics (V
0.05
J
0.5
6
= 300V
=15V
=150°C
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Transfert Characteristics
Eon
Gate Resistance (ohms)
T
T
J
J
=125°C
7
=125°C
T
30
1
J
=25°C
0.0001
V
8
Eoff
T
V
CE
T
J
1.5
GE
=25°C
J
=25°C
(V)
(V)
T
9
J
=25°C
50
2
10
GE
T
Eon
J
=15V)
=150°C
0.001
Rectangular Pulse Duration in Seconds
2.5
11
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Er
Single Pulse
70
3
12
0.01
IGBT
50
40
30
20
10
40
35
30
25
20
15
10
1.25
0.75
0.25
0
5
0
0.5
0
0
1
0
APTGT20H60T3G
0
V
T
R
T
GE
J
J
G
Energy losses vs Collector Current
Reverse Bias Safe Operating Area
=150°C
V
V
R
T
=12Ω
= 150°C
100
0.1
0.5
=15V
J
CE
GE
G
= 150°C
= 12Ω
= 300V
= 15V
200
10
1
Output Characteristics
300
V
1.5
GE
V
V
I
=19V
C
CE
CE
20
(A)
400
(V)
(V)
1
2
Eoff
V
GE
500
2.5
=15V
V
30
GE
V
=13V
GE
600
3
=9V
Eon
Er
10
700
3.5
40
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