APTGT35A120T1G Microsemi Power Products Group, APTGT35A120T1G Datasheet - Page 4

• Manufacturer Part Number: APTGT35A120T1G
• Description: IGBT MOD TRENCH PHASE LEG SP1
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT35A120T1G

• Igbt Type: Trench and Field Stop
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 35A
• Current - Collector (ic) (max): 55A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 2.5nF @ 25V
• Power - Max: 208W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
70
60
50
40
30
20
10
80
70
60
50
40
30
20
10
8
7
6
5
4
3
2
1
0
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Switching Energy Losses vs Gate Resistance
0
0
0.00001
20
0
0
5
V
V
I
T
C
J
CE
GE
= 35A
= 125°C
= 600V
=15V
0.9
0.5
0.3
0.1
0.05
0.7
Output Characteristics (V
0.5
6
Transfert Characteristics
Eon
Gate Resistance (ohms)
40
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1
7
0.0001
1.5
V
V
T
CE
60
J
GE
=25°C
8
(V)
(V)
T
T
2
J
J
=25°C
=25°C
9
2.5
80
GE
T
T
J
=15V)
Eon
J
=125°C
rectangular Pulse Duration (Seconds)
0.001
=125°C
10
Eoff
3
Er
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Single Pulse
100
3.5
11
IGBT
0.01
70
60
50
40
30
20
10
80
60
40
20
8
7
6
5
4
3
2
1
0
0
0
APTGT35A120T1G
0
0
0
V
V
R
T
V
T
R
J
CE
GE
G
J
GE
G
Energy losses vs Collector Current
= 125°C
Reverse Bias Safe Operating Area
10
=125°C
= 27Ω
T
=27Ω
0.1
= 600V
= 15V
=15V
J
= 125°C
300
20
1
Output Characteristics
30
V
600
GE
I
=17V
V
C
Eoff
V
CE
40
(A)
2
CE
(V)
1
900
(V)
50
Eon
V
GE
60
1200
3
V
=15V
V
Eon
GE
Er
GE
=13V
70
=9V
1500
10
80
4
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