APTGF30TL601G Microsemi Power Products Group, APTGF30TL601G Datasheet - Page 5

• Manufacturer Part Number: APTGF30TL601G
• Description: POWER MODULE IGBT 600V 30A SP1
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF30TL601G

• Igbt Type: NPT
• Configuration: Three Level Inverter
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.45V @ 15V, 30A
• Current - Collector (ic) (max): 42A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 1.35nF @ 25V
• Power - Max: 140W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SP1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APTGF30TL601GMI; APTGF30TL601GMI

Q1 to Q4 Typical performance curve
80
60
40
20
60
50
40
30
20
10
0
0
0
1.20
1.10
1.00
0.90
0.80
0
250µs Pulse Test
< 0.5% Duty cycle
250µs Pulse Test
< 0.5% Duty cycle
V
1
25
CE
Output characteristics (V
V
, Collector to Emitter Voltage (V)
Breakdown Voltage vs Junction Temp.
GE
2
T
, Gate to Emitter Voltage (V)
J
1
, Junction Temperature (°C)
Transfer Characteristics
T
J
3
=25°C
50
4
T
J
=125°C
5
2
75
6
7
GE
T
J
3
=125°C
=15V)
T
100
J
=25°C
8
9
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125
10
4
37.5
12.5
50
40
30
20
10
18
16
14
12
10
0
50
25
8
6
4
2
0
0
25
0
DC Collector Current vs Case Temperature
0
250µs Pulse Test
< 0.5% Duty cycle
I
T
APTGF30TL601G
C
V
J
Output Characteristics (V
= 30A
CE
= 25°C
20
, Collector to Emitter Voltage (V)
50
T
C
, Case Temperature (°C)
1
T
J
=25°C
40
Gate Charge (nC)
V
Gate Charge
CE
75
=300V
V
60
CE
2
=120V
100
80
GE
T
J
=10V)
=125°C
3
125
V
CE
100
=480V
150
120
4
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