APTGF75DA120T1G Microsemi Power Products Group, APTGF75DA120T1G Datasheet - Page 4

• Manufacturer Part Number: APTGF75DA120T1G
• Description: IGBT 1200V 100A 500W SP1
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF75DA120T1G

• Igbt Type: NPT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 75A
• Current - Collector (ic) (max): 100A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 5.1nF @ 25V
• Power - Max: 500W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
150
125
100
150
125
100
35
30
25
20
15
10
0.25
0.15
0.05
75
50
25
Switching Energy Losses vs Gate Resistance
75
50
25
5
0
0.3
0.2
0.1
0
0
0.00001
0
0
0
5
V
V
I
T
C
J
CE
GE
= 75A
Output Characteristics (V
= 125°C
0.9
0.3
0.05
0.7
0.1
10
0.5
= 600V
=15V
6
1
Gate Resistance (ohms)
Transfert Characteristics
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
20
7
2
0.0001
30
8
V
T
V
T
CE
J
GE
=125°C
J
Eon
3
=25°C
Eoff
(V)
(V)
40
T
9
J
=125°C
T
J
=25°C
4
50
10
GE
=15V)
rectangular Pulse Duration (Seconds)
0.001
60
5
11
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Single Pulse
70
12
6
0.01
IGBT
APTGF75DA120T1G
175
150
125
100
28
24
20
16
12
150
125
100
75
50
25
8
4
0
75
50
25
0
0
0
0
0
V
V
R
T
V
T
R
Reverse Bias Safe Operating Area
T
Energy losses vs Collector Current
J
CE
GE
G
J
GE
G
J
= 125°C
=125°C
= 7.5 Ω
=7.5 Ω
0.1
= 125°C
= 600V
= 15V
=15V
25
300
1
Output Characteristics
50
2
600
I
C
V
75
V
(A)
CE
V
GE
CE
3
(V)
900
1
=20V
(V)
100
4
Eon
1200
V
125
V
GE
V
GE
5
GE
Eoff
=15V
=9V
=12V
1500
150
10
6
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