APTGT75SK120T1G Microsemi Power Products Group, APTGT75SK120T1G Datasheet

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... CM V Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGT75SK120T1G ® Application 11 • • Features • NTC • 12 • ...

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... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr E Reverse Recovery Energy r APTGT75SK120T1G = 25°C unless otherwise specified j Test Conditions 1200V 25°C V =15V 75A T = 125°C C ...

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... R : Thermistor value     − B       25 www.microsemi.com APTGT75SK120T1G Min Typ Max IGBT 0.35 Diode 0.48 2500 -40 -40 -40 M4 2.5 Min Typ Max 50 3952 Unit °C/W V 150 °C 125 100 4.7 N ...

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... 125° Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.4 0.35 0.9 0.3 0.7 0.25 0.5 0.2 0.3 0.15 0.1 0.1 0.05 0.05 0 0.00001 0.0001 APTGT75SK120T1G =15V =125° ( =25° =125° (V) GE Eon Eoff Er 16 ...

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... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGT75SK120T1G V =600V ...