APTGV15H120T3G Microsemi Power Products Group, APTGV15H120T3G Datasheet - Page 9

• Manufacturer Part Number: APTGV15H120T3G
• Description: IGBT NPT BST CHOP FULL BRDG SP3
• Manufacturer: Microsemi Power Products Group

Specifications of APTGV15H120T3G

• Igbt Type: NPT, Trench and Field Stop
• Configuration: Full Bridge Inverter
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 15A
• Current - Collector (ic) (max): 25A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 1.1nF @ 25V
• Power - Max: 115W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
7.2 Bottom diode typical performance curves
10000
0.8
0.6
0.4
0.2
1000
0.00001
100
1
0
10
2.4
1.6
1.2
0.8
0.4
0.00001
Capacitance vs Collector to Emitter Voltage
2
0
0
0.5
0.3
0.05
0.7
0.1
0.9
V
CE
Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration
, Collector to Emitter Voltage (V)
0.9
0.3
10
0.7
0.5
0.1
0.05
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.0001
0.0001
20
30
50
40
30
20
10
0
Rectangular Pulse Duration (Seconds)
0.001
0
40
Forw ard Current vs Forw ard Voltage
0.001
Rectangular Pulse Duration (Seconds)
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Coes
V
Cres
Cies
F
, Anode to Cathode Voltage (V)
1
50
T
J
=25°C
T
Single Pulse
J
2
=1 25°C
0.01
0.01
Single Pulse
3
120
100
80
60
40
20
0
T
APTGV15H120T3G
Operating Frequency vs Collector Current
J
0
=-55°C
4
switching
0.1
0.1
Hard
5
I
5
C
, Collector Current (A)
ZCS
10
ZVS
1
1
15
V
D = 50%
R
T
T
G
J
C
CE
= 75°C
= 125°C
= 33Ω
= 600V
20
10
10
25
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