APTGT50DA170T1G Microsemi Power Products Group, APTGT50DA170T1G Datasheet - Page 5

• Manufacturer Part Number: APTGT50DA170T1G
• Description: IGBT 1700V 75A 312W SP1
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT50DA170T1G

• Igbt Type: Trench and Field Stop
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1700V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 50A
• Current - Collector (ic) (max): 75A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 4.4nF @ 25V
• Power - Max: 312W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
30
25
20
15
10
0.00001
5
0
0
0
Operating Frequency vs Collector Current
switching
0.9
0.05
0.7
0.5
0.1
0.3
10
hard
ZCS
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
20
ZVS
30
0.0001
I
C
(A)
40
50
V
D=50%
R
T
T
60
J
C
CE
G
=125°C
=75°C
=10 Ω
=900V
0.001
rectangular Pulse Duration (Seconds)
70
www.microsemi.com
Single Pulse
80
Diode
0.01
APTGT50DA170T1G
100
90
80
70
60
50
40
30
20
10
0
0
T
0.1
Forward Characteristic of diode
J
=125°C
0.5
1
V
T
1.5
J
F
=25°C
(V)
1
2
T
J
=125°C
2.5
10
3
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