APTGT50DA170T1G Microsemi Power Products Group, APTGT50DA170T1G Datasheet - Page 5
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APTGT50DA170T1G
Manufacturer Part Number
APTGT50DA170T1G
Description
IGBT 1700V 75A 312W SP1
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGT50DA170T1G.pdf
(5 pages)
Specifications of APTGT50DA170T1G
Igbt Type
Trench and Field Stop
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1700V
Vce(on) (max) @ Vge, Ic
2.4V @ 15V, 50A
Current - Collector (ic) (max)
75A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
4.4nF @ 25V
Power - Max
312W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
30
25
20
15
10
0.00001
5
0
0
0
Operating Frequency vs Collector Current
switching
0.9
0.05
0.7
0.5
0.1
0.3
10
hard
ZCS
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
20
ZVS
30
0.0001
I
C
(A)
40
50
V
D=50%
R
T
T
60
J
C
CE
G
=125°C
=75°C
=10 Ω
=900V
0.001
rectangular Pulse Duration (Seconds)
70
www.microsemi.com
Single Pulse
80
Diode
0.01
APTGT50DA170T1G
100
90
80
70
60
50
40
30
20
10
0
0
T
0.1
Forward Characteristic of diode
J
=125°C
0.5
1
V
T
1.5
J
F
=25°C
(V)
1
2
T
J
=125°C
2.5
10
3
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