APTGF15H120T3G Microsemi Power Products Group, APTGF15H120T3G Datasheet - Page 6
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APTGF15H120T3G
Manufacturer Part Number
APTGF15H120T3G
Description
IGBT MODULE NPT FULL BRIDGE SP3
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGF15H120T3G.pdf
(6 pages)
Specifications of APTGF15H120T3G
Igbt Type
NPT
Configuration
Full Bridge Inverter
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.7V @ 15V, 15A
Current - Collector (ic) (max)
25A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
1nF @ 25V
Power - Max
140W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
10000
0.8
0.6
0.4
0.2
1000
0.00001
100
1
0
10
Capacitance vs Collector to Emitter Voltage
0
0.5
0.3
0.05
0.7
0.1
0.9
V
CE
, Collector to Emitter Voltage (V)
10
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.0001
20
30
0.001
40
Rectangular Pulse Duration (Seconds)
www.microsemi.com
Coes
Cres
Cies
50
0.01
Single Pulse
120
100
80
60
40
20
0
Operating Frequency vs Collector Current
APTGF15H120T3G
0
switching
0.1
Hard
5
I
C
, Collector Current (A)
ZCS
10
ZVS
1
15
V
D = 50%
R
T
T
J
C
CE
G
= 75°C
= 125°C
= 33Ω
= 600V
20
10
25
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