APTGF50H60T1G Microsemi Power Products Group, APTGF50H60T1G Datasheet - Page 5
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APTGF50H60T1G
Manufacturer Part Number
APTGF50H60T1G
Description
IGBT MODULE NPT FULL BRIDGE SP1
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGF50H60T1G.pdf
(6 pages)
Specifications of APTGF50H60T1G
Igbt Type
NPT
Configuration
Full Bridge Inverter
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.45V @ 15V, 50A
Current - Collector (ic) (max)
65A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
2.2nF @ 25V
Power - Max
250W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
APTGF50H60T1G
Manufacturer:
APT
Quantity:
56
60
50
40
30
20
60
50
40
30
20
10
1.5
0.5
0
2
1
0
Switching Energy Losses vs Gate Resistance
2.5
1.5
0.5
0
0
Turn-On Energy Loss vs Collector Current
3
2
1
0
0
Turn-On Delay Time vs Collector Current
Current Rise Time vs Collector Current
0
I
CE
V
V
R
R
V
V
T
I
CE
CE
I
G
CE
G
J
, Collector to Emitter Current (A)
CE
CE
GE
25
25
= 125°C
= 2.7Ω
= 2.7Ω
25
, Collector to Emitter Current (A)
= 400V
= 400V
, Collector to Emitter Current (A)
= 400V
= 15V
T
V
J
GE
=125°C
5
Gate Resistance (Ohms)
=15V,
Eon, 50A
50
50
50
10
75
75
75
T
V
J
15
=125°C,
GE
V
100
100
100
=15V
Tj = 125°C
V
R
GE
CE
G
= 15V
= 2.7Ω
= 400V
Eon, 50A
Eoff, 50A
20
125
125
125
www.microsemi.com
150
150
150
25
120
100
175
150
125
100
2.5
1.5
0.5
60
50
40
30
20
10
80
60
40
20
75
50
0
0
2
1
0
Turn-Off Energy Loss vs Collector Current
0
0
0
0
APTGF50H60T1G
Turn-Off Delay Time vs Collector Current
Current Fall Time vs Collector Current
I
CE
V
V
R
Reverse Bias Safe Operating Area
I
I
V
V
V
R
CE
CE
CE
G
CE
, Collector to Emitter Current (A)
CE
CE
GE
G
25
= 2.7Ω
25
25
, Collector to Emitter Current (A)
, Collector to Emitter Voltage (V)
, Collector to Emitter Current (A)
= 400V
= 2.7Ω
= 400V, V
= 400V
= 15V
T
J
= 125°C
200
50
50
50
GE
= 15V, R
75
75
75
T
J
T
= 25°C
J
= 125°C
V
G
T
400
GE
= 2.7Ω
J
100
100
100
=25°C
=15V,
T
V
J
GE
=125°C
=15V,
125
125
125
600
150
150
150
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