APTGT30X60T3G Microsemi Power Products Group, APTGT30X60T3G Datasheet - Page 4
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APTGT30X60T3G
Manufacturer Part Number
APTGT30X60T3G
Description
IGBT MOD TRENCH 3PH BRIDGE SP3
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGT30X60T3G.pdf
(5 pages)
Specifications of APTGT30X60T3G
Igbt Type
Trench and Field Stop
Configuration
Three Phase Inverter
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.9V @ 15V, 30A
Current - Collector (ic) (max)
50A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
1.6nF @ 25V
Power - Max
90W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Typical Performance Curve
60
50
40
30
20
10
2.5
1.5
0.5
60
50
40
30
20
10
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
Switching Energy Losses vs Gate Resistance
0
0
0.00001
2
1
0
1
0
0
5
0
V
V
I
T
C
J
CE
GE
= 30A
0.7
0.1
0.9
0.5
= 150°C
0.3
Output Characteristics (V
0.05
T
10
= 300V
0.5
6
=15V
J
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
=150°C
Transfert Characteristics
Gate Resistance (ohms)
T
Eon
T
J
20
J
=125°C
7
=125°C
T
1
J
=25°C
Eoff
0.0001
30
V
8
T
V
CE
T
J
1.5
GE
=25°C
J
=25°C
(V)
(V)
40
T
9
J
=25°C
2
Eon
10
50
GE
T
J
=15V)
=150°C
Er
Rectangular Pulse Duration in Seconds
0.001
2.5
60
11
www.microsemi.com
Single Pulse
70
3
12
0.01
IGBT
70
60
50
40
30
20
10
60
50
40
30
20
10
1.5
0.5
0
0
2
1
0
0
0
0
V
T
R
T
V
V
R
T
GE
J
J
G
Energy losses vs Collector Current
Reverse Bias Safe Operating Area
=150°C
J
=10Ω
100
CE
GE
G
APTGT30X60T3G
= 150°C
0.5
0.1
=15V
= 150°C
= 10Ω
= 300V
= 15V
10
200
1
Output Characteristics
20
300
V
1.5
GE
V
I
V
C
=19V
CE
CE
30
(A)
400
(V)
(V)
1
2
V
GE
40
500
2.5
=15V
Eoff
V
GE
V
=13V
GE
600
50
3
=9V
Eon
Er
10
700
3.5
60
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