APTGT100DSK60T3G Microsemi Power Products Group, APTGT100DSK60T3G Datasheet
APTGT100DSK60T3G
Specifications of APTGT100DSK60T3G
Related parts for APTGT100DSK60T3G
APTGT100DSK60T3G Summary of contents
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... Specification of IGBT device but output current must be limited to 75A to not exceed a delta of temperature greater than 30°C for the connectors. These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGT100DSK60T3G ® Application • AC and DC motor control • ...
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... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr E Reverse Recovery Energy r APTGT100DSK60T3G = 25°C unless otherwise specified j Test Conditions 600V 25°C V =15V 100A T = 150°C C ...
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... Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP3 Package outline (dimensions in mm See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com APTGT100DSK60T3G R T: Thermistor temperature 25 Thermistor value at T T − ...
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... Eon Gate Resistance (ohms) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.5 0.9 0.4 0.7 0.3 0.5 0.2 0.3 0.1 0.1 0.05 0 0.00001 0.0001 APTGT100DSK60T3G =15V) GE 200 T J 175 150 125 T =150°C J 100 2.5 3 Energy losses vs Collector Current ...
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... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGT100DSK60T3G Forward Characteristic of diode 200 ...