APT50GF120JRDQ3 Microsemi Power Products Group, APT50GF120JRDQ3 Datasheet - Page 9

IGBT 1200V 120A 521W SOT227

APT50GF120JRDQ3

Manufacturer Part Number
APT50GF120JRDQ3
Description
IGBT 1200V 120A 521W SOT227
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APT50GF120JRDQ3

Igbt Type
NPT
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3V @ 15V, 75A
Current - Collector (ic) (max)
120A
Current - Collector Cutoff (max)
750µA
Input Capacitance (cies) @ Vce
5.32nF @ 25V
Power - Max
521W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT50GF120JRDQ3MI
APT50GF120JRDQ3MI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT50GF120JRDQ3
Manufacturer:
Microsemi Power Products Group
Quantity:
135
Part Number:
APT50GF120JRDQ3
Manufacturer:
APT
Quantity:
1 000
Part Number:
APT50GF120JRDQ3
Quantity:
122
ISOTOP
5,262,336 6 ,503,786 5 ,256,583 4 ,748,103 5 ,283,202 5 ,231,474 5 ,434,095 5 ,528,058 and foreign patents. US and Foreign patents pending. A ll Rights Reserved.
TYPICAL PERFORMANCE CURVES
1
4
5
2
3
I
di
I
t rr - Reverse R ecovery Time, measured from zero crossing where diode
Q rr - Area Under the Curve Defined by I
®
F
RRM
is a Registered Trademark of SGS Thomson.
F
- Forward Conduction Current
/dt - Rate of Diode Current Change Through Zero Crossing.
line through I
r = 4.0 (.157)
current goes from positive to negative, to the point at which the straight
- Maximum Reverse Recovery Current.
+18V
(2 places)
0V
RRM
and 0.25 I
31.5 (1.240)
31.7 (1.248)
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
RRM
7.8 (.307)
8.2 (.322)
APT’s products are covered by one or more of U.S.patents 4,895,810 5 ,045,903 5 ,089,434 5 ,182,234 5 ,019,522
passes through zero.
SOT-227 (ISOTOP
Dimensions in Millimeters and (Inches)
Figure 33, Diode Reverse Recovery Waveform and Definitions
RRM
and t rr .
di
F
* Emitter/Anode
* Emitter/Anode
/dt Adjust
3.3 (.129)
3.6 (.143)
Figure 32. Diode Test Circuit
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
4.0 (.157)
4.2 (.165)
(2 places)
(4 places)
®
) Package Outline
30µH
Zero
V r
APT10035LLL
1
1.95 (.077)
2.14 (.084)
TRANSFORMER
PEARSON 2878
CURRENT
8.9 (.350)
9.6 (.378)
11.8 (.463)
12.2 (.480)
0.75 (.030)
0.85 (.033)
2
Collector/Cathode
D.U.T.
Gate
Hex Nut M4
*
(4 places)
Emitter/Anode terminals are
shorted internally. Current
handling capability is equal
for either Emitter/Anode terminal.
12.6 (.496)
12.8 (.504)
3
4
5
APT50GF120JRDQ3
25.2 (0.992)
25.4 (1.000)
t rr / Q rr
Waveform
0.25 I RRM

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