APTGT50DA120TG Microsemi Power Products Group, APTGT50DA120TG Datasheet - Page 4

• Manufacturer Part Number: APTGT50DA120TG
• Description: IGBT 1200V 75A 277W SP4
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT50DA120TG

• Igbt Type: Trench and Field Stop
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 50A
• Current - Collector (ic) (max): 75A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 3.6nF @ 25V
• Power - Max: 277W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
100
100
12
10
0.5
0.4
0.3
0.2
0.1
Switching Energy Losses vs Gate Resistance
80
60
40
20
0.00001
80
60
40
20
8
6
4
2
0
0
0
0
0
0
5
V
V
I
T
C
CE
GE
J
= 50A
= 125°C
0.9
0.5
0.3
0.1
0.05
0.7
Output Characteristics (V
= 600V
10
=15V
T
0.5
J
6
=125°C
Transfert Characteristics
Gate Resistance (ohms)
20
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1
7
30
0.0001
1.5
V
8
V
T
CE
GE
40
J
=25°C
(V)
T
(V)
J
2
=25°C
9
50
2.5
10
GE
60
T
T
=15V)
J
J
rectangular Pulse Duration (Seconds)
0.001
=125°C
=125°C
Eon
Eoff
Er
11
3
70
Single Pulse
3.5
80
12
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IGBT
0.01
120
100
100
12
10
80
60
40
20
80
60
40
20
8
6
4
2
0
0
0
APTGT50DA120TG
0
0
0
V
V
R
T
V
T
R
Energy losses vs Collector Current
Reverse Bias Safe Operating Area
CE
GE
J
G
J
GE
0.1
= 125°C
G
=125°C
= 18Ω
T
=18Ω
= 600V
= 15V
J
=15V
300
= 125°C
20
1
Eoff
Output Characteristics
600
40
I
V
C
V
GE
V
CE
(A)
=17V
CE
2
1
(V)
900
(V)
60
V
GE
1200
3
=15V
80
V
V
GE
Eon
GE
Eon
=13V
=9V
Er
1500
10
100
4
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