APTGT50SK120TG Microsemi Power Products Group, APTGT50SK120TG Datasheet - Page 5

• Manufacturer Part Number: APTGT50SK120TG
• Description: IGBT 1200V 75A 277W SP4
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT50SK120TG

• Igbt Type: Trench and Field Stop
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 50A
• Current - Collector (ic) (max): 75A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 3.6nF @ 25V
• Power - Max: 277W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
80
70
60
50
40
30
20
10
0.6
0.5
0.4
0.3
0.2
0.1
0.00001
0
0
0
Operating Frequency vs Collector Current
switching
0.05
0.9
0.7
0.5
hard
0.3
0.1
ZCS
10
ZVS
20
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
30
0.0001
I
C
40
(A)
50
V
D=50%
R
T
T
CE
J
C
60
G
=125°C
=75°C
=18Ω
=600V
0.001
rectangular Pulse Duration (Seconds)
70
80
www.microsemi.com
Single Pulse
0.01
150
125
100
75
50
25
0
APTGT50SK120TG
0
Forward Characteristic of diode
0.1
T
J
0.5
=125°C
1
V
T
F
J
(V)
=25°C
1
1.5
Diode
T
2
J
=125°C
2.5
10
5 - 5