APTGV75H60T3G Microsemi Power Products Group, APTGV75H60T3G Datasheet - Page 8

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APTGV75H60T3G

Manufacturer Part Number
APTGV75H60T3G
Description
IGBT NPT BST CHOP FULL BRDG SP3
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTGV75H60T3G

Igbt Type
NPT, Trench and Field Stop
Configuration
Full Bridge Inverter
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.9V @ 15V, 75A
Current - Collector (ic) (max)
100A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
4.62nF @ 25V
Power - Max
250W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
50
40
30
20
10
50
40
30
20
10
1.5
0.5
0
2
1
0
Switching Energy Losses vs Gate Resistance
1.5
0.5
0
0
Turn-On Energy Loss vs Collector Current
2
1
0
0
Turn-On Delay Time vs Collector Current
0
Current Rise Time vs Collector Current
I
V
CE
V
R
R
I
CE
20
CE
G
CE
I
20
G
, Collector to Emitter Current (A)
CE
20
= 3.3Ω
= 400V
= 3.3Ω
= 400V
, Collector to Emitter Current (A)
, Collector to Emitter Current (A)
2
Gate Resistance (Ohms)
40
40
40
T
V
V
J
GE
GE
=125°C
4
=15V,
60
60
60
= 15V
Eoff, 60A
6
80
80
80
T
V
J
=125°C,
GE
=15V
Tj = 125°C
V
R
100
CE
100
100
8
G
= 3.3Ω
V
V
T
= 400V
Eon, 60A
CE
GE
J
= 125°C
= 400V
= 15V
120
120
120
10
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140
140
140
12
125
100
4
3
2
1
0
50
40
30
20
10
140
120
100
75
50
25
0
80
60
40
20
0
0
Turn-Off Energy Loss vs Collector Current
0
APTGV75H60T3G
0
V
V
R
0
Turn-Off Delay Time vs Collector Current
CE
GE
G
V
Current Fall Time vs Collector Current
I
CE
= 3.3Ω
I
CE
Reverse Bias Safe Operating Area
V
R
CE
= 400V
= 15V
20
I
CE
G
CE
20
, Collector to Emitter Current (A)
, Collector to Emitter Voltage (V)
20
, Collector to Emitter Current (A)
= 3.3Ω
100
, Collector to Emitter Current (A)
= 400V
V
V
T
GE
CE
J
40
=25°C
=15V,
= 400V, V
40
40
200
60
60
60
GE
300
T
J
= 15V, R
= 125°C
80
T
80
80
J
= 125°C
400
V
T
100
J
GE
G
100
100
=125°C
= 3.3Ω
=15V,
T
J
500
= 25°C
120
120
120
600
140
140
140
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