APTGT75DA120TG Microsemi Power Products Group, APTGT75DA120TG Datasheet - Page 4

• Manufacturer Part Number: APTGT75DA120TG
• Description: IGBT 1200V 110A 357W SP4
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT75DA120TG

• Igbt Type: Trench and Field Stop
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 75A
• Current - Collector (ic) (max): 110A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 5.34nF @ 25V
• Power - Max: 357W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
150
125
100
150
125
100
16
14
12
10
0.35
0.25
0.15
0.05
Switching Energy Losses vs Gate Resistance
75
50
25
75
50
25
0.4
0.3
0.2
0.1
8
6
4
2
0
0
0.00001
0
0
0
0
5
V
V
I
T
C
Eoff
CE
GE
J
= 75A
= 125°C
Output Characteristics (V
= 600V
=15V
4
0.1
T
0.9
0.7
0.3
0.5
J
0.05
6
=125°C
Transfert Characteristics
Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
8
1
T
7
J
=25°C
12
0.0001
8
V
V
CE
16
GE
2
(V)
T
(V)
J
=25°C
9
20
T
10
GE
J
24
=125°C
T
3
Eon
=15V)
J
Er
rectangular Pulse Duration (Seconds)
=125°C
0.001
11
28
Eoff
Single Pulse
www.microsemi.com
32
12
4
IGBT
0.01
175
150
125
100
150
125
100
16
14
12
10
75
50
25
75
50
25
8
6
4
2
0
APTGT75DA120TG
0
0
0
0
0
V
V
R
T
V
T
R
Reverse Bias Safe Operating Area
Energy losses vs Collector Current
CE
GE
J
G
GE
J
T
= 125°C
G
0.1
=125°C
= 4.7Ω
=4.7Ω
J
= 600V
= 15V
=15V
25
= 125°C
400
1
Output Characteristics
50
Er
V
GE
I
=17V
C
V
800
V
75
CE
Eoff
(A)
CE
2
(V)
1
(V)
100
1200
V
GE
3
=15V
V
V
125
GE
GE
=13V
=9V
Eon
Er
1600
10
150
4
4 - 5