APTGF100DA120TG Microsemi Power Products Group, APTGF100DA120TG Datasheet - Page 4

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APTGF100DA120TG

Manufacturer Part Number
APTGF100DA120TG
Description
IGBT NPT BOOST CHOP 1200V SP4
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTGF100DA120TG

Igbt Type
NPT
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.7V @ 15V, 100A
Current - Collector (ic) (max)
135A
Current - Collector Cutoff (max)
350µA
Input Capacitance (cies) @ Vce
6.9nF @ 25V
Power - Max
568W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Typical Performance Curve
600
500
400
300
200
100
400
320
240
160
80
0
9
8
7
6
5
4
3
2
1
0
0
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
0
9
0
On state Voltage vs Gate to Emitter Volt.
T
250µs Pulse Test
< 0.5% Duty cycle
-50
250µs Pulse Test
< 0.5% Duty cycle
250µs Pulse Test
< 0.5% Duty cycle
Breakdown Voltage vs Junction Temp.
J
V
= 25°C
V
CE
10
GE
, Collector to Emitter Voltage (V)
Output characteristics (V
V
, Gate to Emitter Voltage (V)
-25
T
G E
J
, Junction Temperature (°C)
4
, Gate to Emitter Voltage (V)
2
Transfer Characteristics
11
0
T
J
=125°C
12
25
8
4
13
APT website – http://www.advancedpower.com
50
T
J
=25°C
T
14
75
GE
J
12
T
=25°C
6
T
J
=15V)
Ic=100A
=125°C
J
Ic=200A
=25°C
Ic=50A
100 125
15
16
16
8
18
16
14
12
10
180
160
140
120
100
100
8
6
4
2
0
6
5
4
3
2
1
0
80
60
40
20
80
60
40
20
APTGF100DA120TG
0
0
-50
0
-50 -25
DC Collector Current vs Case Temperature
0
On state Voltage vs Junction Temperature
250µs Pulse Test
< 0.5% Duty cycle
V
250µs Pulse Test
< 0.5% Duty cycle
V
I
T
C
GE
CE
J
100
= 100A
-25
Output Characteristics (V
= 25°C
= 15V
, Collector to Emitter Voltage (V)
T
J
, Junction Temperature (°C)
T
C
200
0
1
, Case Temperature (°C)
0
Gate Charge (nC)
Gate Charge
25
300
25
V
CE
50
2
=600V
400
50
75
T
J
V
=25°C
500
75
GE
CE
100 125 150
=10V)
T
=240V
3
J
V
Ic=200A
Ic=100A
Ic=50A
=125°C
CE
100
600
=960V
125
700
4
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