APTGT50A120TG Microsemi Power Products Group, APTGT50A120TG Datasheet - Page 5
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APTGT50A120TG
Manufacturer Part Number
APTGT50A120TG
Description
IGBT MOD TRENCH PHASE LEG SP4
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGT50A120TG.pdf
(5 pages)
Specifications of APTGT50A120TG
Igbt Type
Trench and Field Stop
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.1V @ 15V, 50A
Current - Collector (ic) (max)
75A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
3.6nF @ 25V
Power - Max
277W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
80
70
60
50
40
30
20
10
0.6
0.5
0.4
0.3
0.2
0.1
0.00001
0
0
0
Operating Frequency vs Collector Current
switching
0.05
0.9
0.7
0.5
hard
0.3
0.1
ZCS
10
ZVS
20
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
30
0.0001
I
C
40
(A)
50
V
D=50%
R
T
T
CE
J
C
60
G
=125°C
=75°C
=18Ω
=600V
0.001
rectangular Pulse Duration (Seconds)
70
www.microsemi.com
80
Single Pulse
0.01
150
125
100
75
50
25
0
APTGT50A120TG
0
Forward Characteristic of diode
0.1
T
J
0.5
=125°C
1
V
T
F
J
(V)
=25°C
1
1.5
Diode
T
2
J
=125°C
2.5
10
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