APTGT35X120T3G Microsemi Power Products Group, APTGT35X120T3G Datasheet - Page 5

• Manufacturer Part Number: APTGT35X120T3G
• Description: IGBT MOD TRENCH 3PH BRIDGE SP3
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT35X120T3G

• Igbt Type: Trench and Field Stop
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 35A
• Current - Collector (ic) (max): 55A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 2.5nF @ 25V
• Power - Max: 208W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
1.4
1.2
0.8
0.6
0.4
0.2
40
30
20
10
0.00001
0
1
0
0
Operating Frequency vs Collector Current
0.05
0.9
0.7
0.5
0.3
0.1
switching
hard
10
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.0001
20
I
C
(A)
30
V
D=50%
R
T
T
J
C
CE
G
=125°C
=75°C
=27Ω
=600V
40
0.001
rectangular Pulse Duration (Seconds)
www.microsemi.com
Single Pulse
50
Diode
0.01
80
70
60
50
40
30
20
10
0
APTGT35X120T3G
0
Forward Characteristic of diode
0.1
1
T
V
J
=125°C
F
(V)
2
1
T
J
=25°C
3
10
4
5 - 5