APTGV50H60BG Microsemi Power Products Group, APTGV50H60BG Datasheet - Page 7

• Manufacturer Part Number: APTGV50H60BG
• Description: IGBT NPT BST CHOP FULL BRDG SP4
• Manufacturer: Microsemi Power Products Group

Specifications of APTGV50H60BG

• Igbt Type: NPT, Trench and Field Stop
• Configuration: Boost Chopper, Full Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.9V @ 15V, 50A
• Current - Collector (ic) (max): 80A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 3.15nF @ 25V
• Power - Max: 176W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SP4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

6. Full bridge top switches curves
6.1 Top Trench + Field Stop IGBT typical performance curves
100
100
2.5
1.5
0.5
0.8
0.6
0.4
0.2
Switching Energy Losses vs Gate Resistance
80
60
40
20
80
60
40
20
0.00001
3
2
1
0
0
1
0
0
5
0
5
0.7
0.1
0.9
0.5
0.3
Output Characteristics (V
0.05
T
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.5
J
6
15
=150°C
Transfert Characteristics
Gate Resistance (ohms)
Eon
T
T
J
J
7
=125°C
=125°C
25
T
1
J
0.0001
=25°C
V
8
V
T
CE
T
J
1.5
GE
35
=25°C
J
Eoff
=25°C
(V)
(V)
T
9
J
=25°C
45
2
10
V
V
I
T
GE
C
J
T
CE
GE
= 50A
= 150°C
J
=15V)
=150°C
= 300V
Rectangular Pulse Duration in Seconds
=15V
0.001
2.5
55
11
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Single Pulse
65
3
12
0.01
125
100
100
3.5
2.5
1.5
0.5
75
50
25
80
60
40
20
0
0
3
2
1
0
0
0
0
APTGV50H60BG
V
V
R
T
V
T
R
T
Energy losses vs Collector Current
Reverse Bias Safe Operating Area
CE
GE
J
J
J
G
GE
G
0.1
=150°C
= 150°C
100
=8.2Ω
= 150°C
0.5
= 8.2Ω
= 300V
=15V
= 15V
20
200
1
Output Characteristics
40
300
V
1.5
I
GE
C
V
V
=19V
CE
(A)
CE
400
1
(V)
(V)
2
60
V
GE
500
2.5
=15V
V
GE
80
Eoff
V
=13V
GE
600
3
=9V
Eon
10
100
3.5
700
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