APTGF150A120T3WG Microsemi Power Products Group, APTGF150A120T3WG Datasheet - Page 5

• Manufacturer Part Number: APTGF150A120T3WG
• Description: IGBT NPT PHASE 1200V 210A SP3
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF150A120T3WG

• Igbt Type: NPT
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 150A
• Current - Collector (ic) (max): 210A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 9.3nF @ 25V
• Power - Max: 961W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
100
0.6
0.5
0.4
0.3
0.2
0.1
0.00001
80
60
40
20
0
0
Operating Frequency vs Collector Current
0
switching
0.9
0.05
0.7
0.5
0.1
0.3
hard
40
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
ZCS
0.0001
80
I
C
ZVS
(A)
120
V
D=50%
R
T
T
CE
J
C
G
=125°C
=75°C
=5.6 Ω
160
=600V
0.001
rectangular Pulse Duration (Seconds)
www.microsemi.com
200
Single Pulse
Diode
0.01
APTGF150A120T3WG
200
150
100
50
0
0.0
0.1
Forward Characteristic of diode
0.5
1.0
T
V
J
=125°C
1.5
F
(V)
1
2.0
T
J
=25°C
2.5
10
3.0
5 - 5