APTGT50H120TG Microsemi Power Products Group, APTGT50H120TG Datasheet

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APTGT50H120TG

Manufacturer Part Number
APTGT50H120TG
Description
IGBT MOD TRENCH FULL BRIDGE SP4
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTGT50H120TG

Igbt Type
Trench and Field Stop
Configuration
Full Bridge Inverter
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.1V @ 15V, 50A
Current - Collector (ic) (max)
75A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
3.6nF @ 25V
Power - Max
277W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute maximum ratings
RBSOA
Symbol
E2
G1
E1
G2
V
V
I
P
I
CM
CES
Fast Trench + Field Stop IGBT
NTC1
C
GE
D
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
APT0502 on www.microsemi.com
G3
E3
VBUS
E1
G1
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
Q1
Q2
Power Module
Full - Bridge
0/VBU S
OUT1
Parameter
0/VBUS
G4
E4
E2
G2
OUT2
VBUS
Q4
Q3
OUT2
OUT1
NTC2
NTC1
NTC2
www.microsemi.com
T
T
T
T
T
G3
G4
E4
E3
C
C
C
C
j
®
= 125°C
= 25°C
= 80°C
= 25°C
= 25°C
Application
Features
Benefits
100A @ 1150V
Max ratings
APTGT50H120TG
1200
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Fast Trench + Field Stop IGBT
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Internal thermistor for temperature monitoring
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS Compliant
100
±20
277
75
50
-
-
-
-
-
-
-
-
-
-
V
I
C
CES
Low voltage drop
Low tail current
Switching frequency up to 20 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
Symmetrical design
Lead frames for power connections
= 50A @ Tc = 80°C
= 1200V
Unit
W
V
A
V
®
Technology
1 - 5

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APTGT50H120TG Summary of contents

Page 1

... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGT50H120TG V ® I Application • Welding converters • Switched Mode Power Supplies Q3 • ...

Page 2

... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr E Reverse Recovery Energy r APTGT50H120TG = 25°C unless otherwise specified j Test Conditions 1200V 25° 15V 50A T = 125°C C ...

Page 3

... Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP4 Package outline (dimensions in mm) See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com APTGT50H120TG R T: Thermistor temperature 25    Thermistor value at T     ...

Page 4

... T = 125° Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.5 0.9 0.4 0.7 0.3 0.5 0.2 0.3 0.1 0.1 0.05 0 0.00001 0.0001 APTGT50H120TG =15V) GE 100 80 T =125° 2.5 3 3.5 0 Energy losses vs Collector Current =25° =125°C ...

Page 5

... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGT50H120TG Forward Characteristic of diode 150 ...

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