APTGT50TDU60PG Microsemi Power Products Group, APTGT50TDU60PG Datasheet - Page 5

• Manufacturer Part Number: APTGT50TDU60PG
• Description: IGBT MOD TRIPLE DUAL SOURCE SP6P
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT50TDU60PG

• Igbt Type: Trench and Field Stop
• Configuration: Triple, Dual - Common Source
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.9V @ 15V, 50A
• Current - Collector (ic) (max): 80A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 3.15nF @ 25V
• Power - Max: 176W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
1.6
1.4
1.2
0.8
0.6
0.4
0.2
120
100
0.00001
80
60
40
20
1
0
0
Operating Frequency vs Collector Current
0
0.5
0.3
0.1
0.9
0.7
switching
0.05
ZVS
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Hard
20
0.0001
ZCS
I
C
40
(A)
V
D=50%
R
T
T
60
CE
G
J
c
=150°C
=85°C
=8.2Ω
=300V
0.001
Rectangular Pulse Duration in Seconds
Single Pulse
www.microsemi.com
Diode
80
0.01
APTGT50TDU60PG
100
80
60
40
20
0
0
0.1
Forward Characteristic of diode
T
0.4
J
=150°C
T
0.8
J
=125°C
V
1.2
F
1
(V)
T
J
=25°C
1.6
2
10
2.4
5 - 5