APTGT150DA120G Microsemi Power Products Group, APTGT150DA120G Datasheet - Page 4

• Manufacturer Part Number: APTGT150DA120G
• Description: IGBT 1200V 220A 690W SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT150DA120G

• Igbt Type: Trench and Field Stop
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 150A
• Current - Collector (ic) (max): 220A
• Current - Collector Cutoff (max): 350µA
• Input Capacitance (cies) @ Vce: 10.7nF @ 25V
• Power - Max: 690W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
300
250
200
150
100
300
250
200
150
100
34
30
26
22
18
14
10
0.16
0.12
0.08
0.04
Switching Energy Losses vs Gate Resistance
50
50
6
2
0.2
0
0.00001
0
0
0
0
5
V
V
I
T
C
J
CE
GE
= 150A
= 125°C
Output Characteristics (V
T
= 600V
2
=15V
0.9
0.3
0.5
0.1
0.05
J
0.7
=125°C
6
Transfert Characteristics
Gate Resistance (ohms)
4
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1
T
Eon
7
J
=25°C
6
0.0001
8
8
V
V
CE
GE
2
(V)
T
10 12 14
(V)
J
=25°C
9
T
10
Eon
GE
J
=125°C
T
3
=15V)
J
rectangular Pulse Duration (Seconds)
=125°C
0.001
Eoff
11
Er
16
Single Pulse
www.microsemi.com
18
12
IGBT
4
0.01
350
300
250
200
150
100
300
250
200
150
100
32
28
24
20
16
12
50
50
8
4
0
0
0
APTGT150DA120G
0
0
0
V
V
R
T
V
T
R
Energy losses vs Collector Current
J
Reverse Bias Safe Operating Area
CE
GE
G
J
T
= 125°C
GE
G
0.1
=125°C
= 2.2Ω
=2.2Ω
J
= 600V
= 15V
=15V
50
= 125°C
400
1
Output Characteristics
100
V
GE
I
=17V
C
V
150
800
Eoff
V
(A)
CE
CE
2
(V)
1
(V)
200
1200
V
GE
3
V
=15V
V
250
GE
GE
Eon
=13V
=9V
Er
1600
10
300
4
4 - 5