APTGF75H120TG Microsemi Power Products Group, APTGF75H120TG Datasheet - Page 5

• Manufacturer Part Number: APTGF75H120TG
• Description: POWER MODULE IGBT 1200V 75A SP4
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF75H120TG

• Igbt Type: NPT
• Configuration: Full Bridge Inverter
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 75A
• Current - Collector (ic) (max): 100A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 5.1nF @ 25V
• Power - Max: 500W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APTGF75H120TGMI; APTGF75H120TGMI

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
100
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.00001
90
80
70
60
50
40
30
20
10
0
0
Operating Frequency vs Collector Current
0
0.9
0.05
0.7
0.5
0.1
0.3
switching
hard
20
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
ZCS
0.0001
40
I
C
(A)
ZVS
60
V
D=50%
R
T
T
J
C
CE
G
=125°C
=75°C
www.microsemi.com
=7.5 Ω
=600V
80
0.001
rectangular Pulse Duration (Seconds)
100
Single Pulse
Diode
0.01
125
100
75
50
25
0
0
0.1
APTGF75H120TG
Forward Characteristic of diode
0.5
1
T
V
J
=125°C
1.5
F
(V)
1
T
2
J
=25°C
2.5
10
3
5 - 5