APTGF200U120DG Microsemi Power Products Group, APTGF200U120DG Datasheet - Page 6

• Manufacturer Part Number: APTGF200U120DG
• Description: IGBT 1200V 275A 1136W SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF200U120DG

• Igbt Type: NPT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 200A
• Current - Collector (ic) (max): 275A
• Current - Collector Cutoff (max): 500µA
• Input Capacitance (cies) @ Vce: 13.8nF @ 25V
• Power - Max: 1136W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
0.12
0.08
0.06
0.04
0.02
120
100
0.1
80
60
40
20
0.00001
0
0
Operating Frequency vs Collector Current
20
0.05
0.9
switching
0.7
0.5
0.3
0.1
Hard
60
I
C
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
, Collector Current (A)
ZCS
100
0.0001
140
ZVS
V
D = 50%
R
T
T
CE
G
J
C
= 125°C
= 75°C
= 1.2Ω
= 600V
180
www.microsemi.com
0.001
Rectangular Pulse Duration (Seconds)
220
Single Pulse
0.01
450
400
350
300
250
200
150
100
50
0
0
V
CE
APTGF200U120DG
Reverse Bias Safe Operating Area
, Collector to Emitter Voltage (V)
0.1
400
800
1
1200
10
6 – 6