APTGT300SK60G Microsemi Power Products Group, APTGT300SK60G Datasheet - Page 4

• Manufacturer Part Number: APTGT300SK60G
• Description: IGBT 600V 430A 1150W SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT300SK60G

• Igbt Type: Trench and Field Stop
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.8V @ 15V, 300A
• Current - Collector (ic) (max): 430A
• Current - Collector Cutoff (max): 350µA
• Input Capacitance (cies) @ Vce: 24nF @ 25V
• Power - Max: 1150W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
600
500
400
300
200
100
600
500
400
300
200
100
20
15
10
0.14
0.12
0.08
0.06
0.04
0.02
Switching Energy Losses vs Gate Resistance
5
0
0.1
0
0
0.00001
0
0
5
0
V
V
I
T
C
CE
GE
J
= 300A
= 150°C
0.9
Output Characteristics (V
= 300V
0.7
0.5
=15V
0.3
0.1
0.05
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
2
Transfert Characteristics
6
0.5
T
Gate Resistance (ohms)
J
T
=150°C
J
Eon
=125°C
T
4
7
J
=25°C
T
J
0.0001
1
=125°C
V
V
CE
GE
T
6
8
J
(V)
T
=25°C
(V)
J
1.5
=25°C
Eoff
T
8
9
J
=25°C
GE
T
=15V)
Eon
J
2
Rectangular Pulse Duration in Seconds
=150°C
10
0.001
10
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Er
2.5
12
11
Single Pulse
0.01
700
600
500
400
300
200
100
600
500
400
300
200
100
17.5
12.5
7.5
2.5
0
0
20
15
10
5
0
0
APTGT300SK60G
0
0
V
T
R
T
Energy losses vs Collector Current
Reverse Bias Safe Operating Area
V
V
R
T
GE
J
J
G
=150°C
100
0.1
J
CE
GE
=1.8Ω
G
= 150°C
0.5
=15V
= 150°C
= 1.8Ω
100
= 300V
= 15V
V
GE
200
1
Output Characteristics
=19V
200
300
1.5
I
V
V
C
300
CE
CE
(A)
400
(V)
1
(V)
2
400
V
IGBT
GE
Eoff
500
2.5
=15V
V
GE
V
500
=13V
GE
600 700
Er
Eon
3
=9V
10
600
3.5
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