APTGT75TDU60PG Microsemi Power Products Group, APTGT75TDU60PG Datasheet - Page 3
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APTGT75TDU60PG
Manufacturer Part Number
APTGT75TDU60PG
Description
IGBT MOD TRPL DUAL SOURCE SP6-P
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGT75TDU60PG.pdf
(5 pages)
Specifications of APTGT75TDU60PG
Igbt Type
Trench and Field Stop
Configuration
Triple, Dual - Common Source
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.9V @ 15V, 75A
Current - Collector (ic) (max)
100A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
4.62nF @ 25V
Power - Max
250W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Thermal and package characteristics
SP6-P Package outline
Symbol Characteristic
See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com
Torque
V
R
T
T
Wt
T
ISOL
STG
thJC
C
J
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
(dimensions in mm)
www.microsemi.com
To heatsink
APTGT75TDU60PG
Diode
IGBT
M6
2500
Min
-40
-40
-40
3
Typ
Max
0.60
0.98
175
125
100
250
5 places (3:1)
5
°C/W
Unit
N.m
°C
V
g
3 - 5