APTGT200DA120D3G Microsemi Power Products Group, APTGT200DA120D3G Datasheet - Page 2

• Manufacturer Part Number: APTGT200DA120D3G
• Description: IGBT 1200V 300A 1050W D3
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT200DA120D3G

• Igbt Type: Trench and Field Stop
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 200A
• Current - Collector (ic) (max): 300A
• Current - Collector Cutoff (max): 6mA
• Input Capacitance (cies) @ Vce: 14nF @ 25V
• Power - Max: 1050W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: D3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics
Dynamic Characteristics
Reverse diode ratings and characteristics
Thermal and package characteristics
Symbol Characteristic
Symbol Characteristic
Symbol Characteristic
Symbol Characteristic
Torque
BV
V
V
V
T
T
T
T
R
T
I
I
C
C
C
E
CE(on)
Wt
GE(th)
V
Q
T
CES
GES
T
d(off)
T
T
d(off)
T
T
d(on)
d(on)
ISOL
STG
thJC
oes
res
rec
ies
CES
C
F
rr
J
r
f
r
f
Collector - Emitter Breakdown Voltage
Zero Gate Voltage Collector Current
Collector Emitter on Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Diode Forward Voltage
Reverse Recovery Energy
Reverse Recovery Charge
Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
All ratings @ T
APT website – http://www.advancedpower.com
j
= 25°C unless otherwise specified
V
Test Conditions
I
V
I
V
di/dt =900A/µs
I
V
di/dt =900A/µs
Test Conditions
V
V
I
V
V
Test Conditions
V
V
f = 1MHz
Inductive Switching (25°C)
V
V
I
R
Inductive Switching (125°C)
V
V
I
R
C
C
C
F
F
F
For terminals
GE
To Heatsink
G
G
GE
GE
GE
GE
GE
CE
GE
Bus
GE
Bus
GE
R
R
= 200A
= 200A
= 200A
= 200A
= 200A
= 200A
= 3.6Ω
= 3.6Ω
= 600V
= 600V
= 0V, V
= 25V
= 0V
= 0V, I
= 15V
= V
= 20V, V
= 0V
= 15V
= 15V
= 600V
= 600V
CE
, I
C
CE
= 6mA
C
CE
= 1200V
= 6mA
APTGT200DA120D3
= 0V
T
T
T
T
T
T
T
j
j
j
j
j
j
j
= 25°C
Diode
= 125°C
= 25°C
= 125°C
= 125°C
= 25°C
= 125°C
IGBT
M6
M6
2500
Min
Min
1200
Min
Min
-40
-40
-40
1.4
5.0
3
3
Typ
0.66
Typ
Typ
Typ
280
550
130
300
100
650
180
1.6
1.6
1.7
2.0
5.8
0.8
17
20
36
14
90
Max
0.12
0.20
Max
Max
Max
150
125
125
380
600
2.1
2.1
6.5
5
5
6
Unit
°C/W
Unit
N.m
Unit
Unit
mA
mJ
µC
°C
nA
nF
V
ns
ns
V
V
V
V
g
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