APTGF350SK60G Microsemi Power Products Group, APTGF350SK60G Datasheet - Page 4
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APTGF350SK60G
Manufacturer Part Number
APTGF350SK60G
Description
IGBT 600V 430A 1562W SP6
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGF350SK60G.pdf
(6 pages)
Specifications of APTGF350SK60G
Igbt Type
NPT
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 360A
Current - Collector (ic) (max)
430A
Current - Collector Cutoff (max)
200µA
Input Capacitance (cies) @ Vce
17.2nF @ 25V
Power - Max
1562W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Typical Performance Curve
1200
1000
1200
1000
800
600
400
200
800
600
400
200
8
7
6
5
4
3
2
1
0
0
0
1.20
1.10
1.00
0.90
0.80
0.70
6
0
0
T
250µs Pulse Test
< 0.5% Duty cycle
On state Voltage vs Gate to Emitter Volt.
250µs Pulse Test
< 0.5% Duty cycle
250µs Pulse Test
< 0.5% Duty cycle
-50
V
J
= 25°C
CE
1
Output characteristics (V
Breakdown Voltage vs Junction Temp.
, Collector to Emitter Voltage (V)
V
V
GE
GE
T
8
-25
2
J
, Gate to Emitter Voltage (V)
, Gate to Emitter Voltage (V)
, Junction Temperature (°C)
Transfer Characteristics
1
T
3
J
=25°C
0
10
4
T
25
J
=125°C
T
5
2
J
=-55°C
12
50
6
GE
7
T
75
=15V)
J
T
3
Ic=720A
=-55°C
Ic=360A
T
J
Ic=180A
=125°C
14
J
8
=25°C
www.microsemi.com
100 125
9
10
16
4
1200
1000
500
400
300
200
100
800
600
400
200
18
16
14
12
10
3.5
2.5
1.5
0.5
8
6
4
2
0
4
3
2
1
0
0
0
-50
0
0
DC Collector Current vs Case Temperature
0
On state Voltage vs Junction Temperature
Ic=720A
Ic=360A
I
T
Ic=180A
C
V
250µs Pulse Test
< 0.5% Duty cycle
J
Output Characteristics (V
200
= 360A
APTGF350SK60G
CE
-25
= 25°C
T
25
J
, Collector to Emitter Voltage (V)
, Junction Temperature (°C)
T
C
, Case Temperature (°C)
1
400
0
Gate Charge (nC)
50
Gate Charge
600
T
25
V
J
=25°C
CE
=300V
75
2
250µs Pulse Test
< 0.5% Duty cycle
V
800 1000 1200 1400
50
V
GE
CE
= 15V
=120V
100
75
GE
T
T
J
J
=125°C
=10V)
=-55°C
3
V
CE
125
100
=480V
125
150
4
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