APTGT50H170TG Microsemi Power Products Group, APTGT50H170TG Datasheet - Page 4
![no-image](/images/manufacturer_photos/0/4/447/microsemi_power_products_group_sml.jpg)
APTGT50H170TG
Manufacturer Part Number
APTGT50H170TG
Description
IGBT MOD TRENCH FULL BRIDGE SP4
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGT50H170TG.pdf
(5 pages)
Specifications of APTGT50H170TG
Igbt Type
Trench and Field Stop
Configuration
Full Bridge Inverter
Voltage - Collector Emitter Breakdown (max)
1700V
Vce(on) (max) @ Vge, Ic
2.4V @ 15V, 50A
Current - Collector (ic) (max)
75A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
4.4nF @ 25V
Power - Max
312W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Typical Performance Curve
100
100
50
40
30
20
10
0.45
0.35
0.25
0.15
0.05
80
60
40
20
Switching Energy Losses vs Gate Resistance
80
60
40
20
0.4
0.3
0.2
0.1
0
0
0
0.00001
0
0
0
5
V
V
I
T
C
J
CE
GE
= 50A
T
Output Characteristics (V
10
0.5
= 125°C
J
6
= 900V
=125°C
=15V
0.5
0.3
0.05
0.7
0.9
0.1
Transfert Characteristics
Gate Resistance (ohms)
20
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1
7
1.5
30
8
0.0001
V
T
V
CE
J
GE
40
=25°C
2
9
(V)
(V)
T
J
2.5
=25°C
50
10
T
GE
60
J
11
3
=125°C
T
=15V)
J
=125°C
rectangular Pulse Duration (Seconds)
0.001
3.5
70
12
Eon
Eoff
Er
Single Pulse
www.microsemi.com
80
13
4
IGBT
0.01
125
100
50
40
30
20
10
75
50
25
100
0
0
80
60
40
20
0
0
0
0
APTGT50H170TG
V
V
R
T
V
T
R
Energy losses vs Collector Current
J
Reverse Bias Safe Operating Area
CE
GE
G
J
T
= 125°C
GE
G
=125°C
= 10Ω
=10Ω
0.1
J
= 900V
= 15V
=15V
= 125°C
400
20
1
Output Characteristics
800
40
V
I
2
GE
C
V
(A)
=20V
CE
V
CE
1200
(V)
1
60
(V)
V
3
GE
=15V
1600
V
80
GE
V
4
=13V
GE
Eon
=9V
Eoff
Er
2000
10
100
5
4 - 5