APTGF200DA120D3G Microsemi Power Products Group, APTGF200DA120D3G Datasheet - Page 5

• Manufacturer Part Number: APTGF200DA120D3G
• Description: IGBT 1200V 300A 1400W D3
• Manufacturer: Microsemi Power Products Group

Specifications of APTGF200DA120D3G

• Igbt Type: NPT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 200A
• Current - Collector (ic) (max): 300A
• Current - Collector Cutoff (max): 5mA
• Input Capacitance (cies) @ Vce: 13nF @ 25V
• Power - Max: 1400W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: D3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
0.18
0.16
0.14
0.12
0.08
0.06
0.04
0.02
70
60
50
40
30
20
10
0
0.1
0.00001
0
0
Operating Frequency vs Collector Current
0.9
0.05
0.7
0.5
0.1
0.3
50
ZCS
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
switching
hard
100
0.0001
I
C
(A)
ZVS
150
V
D=50%
R
T
T
J
C
CE
G
=125°C
=75°C
=4.7 Ω
200
=600V
0.001
rectangular Pulse Duration (Seconds)
250
Single Pulse
www.microsemi.com
Diode
0.01
APTGF200DA120D3G
400
300
200
100
0
0
0.1
Forward Characteristic of diode
0.5
1
T
J
=125°C
V
1.5
F
(V)
1
T
2
J
=25°C
2.5
10
3
5 - 5