APTGT150DU120G Microsemi Power Products Group, APTGT150DU120G Datasheet - Page 3
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APTGT150DU120G
Manufacturer Part Number
APTGT150DU120G
Description
IGBT MOD TRENCH DUAL SOURCE SP6
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGT150DU120G.pdf
(5 pages)
Specifications of APTGT150DU120G
Igbt Type
Trench and Field Stop
Configuration
Dual, Common Source
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.1V @ 15V, 150A
Current - Collector (ic) (max)
220A
Current - Collector Cutoff (max)
350µA
Input Capacitance (cies) @ Vce
10.7nF @ 25V
Power - Max
690W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Thermal and package characteristics
Symbol Characteristic
SP6 Package outline
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
Torque
V
R
T
T
Wt
T
ISOL
STG
thJC
C
J
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
(dimensions in mm)
www.microsemi.com
To heatsink
For terminals
APTGT150DU120G
Diode
IGBT
M6
M5
2500
Min
-40
-40
-40
3
2
Typ
Max
0.18
0.30
150
125
100
280
3.5
5
°C/W
Unit
N.m
°C
V
g
3 - 5