APTGT450DA60G Microsemi Power Products Group, APTGT450DA60G Datasheet - Page 4
APTGT450DA60G
Manufacturer Part Number
APTGT450DA60G
Description
IGBT 600V 550A 1750W SP6
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGT450DA60G.pdf
(5 pages)
Specifications of APTGT450DA60G
Igbt Type
Trench and Field Stop
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.8V @ 15V, 450A
Current - Collector (ic) (max)
550A
Current - Collector Cutoff (max)
500µA
Input Capacitance (cies) @ Vce
37nF @ 25V
Power - Max
1750W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Typical Performance Curve
1000
1000
30
20
10
0.08
0.06
0.04
0.02
Switching Energy Losses vs Gate Resistance
800
600
400
200
800
600
400
200
0
0.1
0.00001
0
0
0
0
V
V
I
T
5
0
C
J
CE
GE
= 450A
= 150°C
Output Characteristics (V
= 300V
0.7
0.5
=15V
0.9
0.3
0.1
0.05
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Transfert Characteristics
6
0.5
Gate Resistance (ohms)
T
2
J
=150°C
Eon
T
J
7
=125°C
T
0.0001
T
J
J
1
=125°C
=25°C
V
V
CE
GE
4
T
8
(V)
T
J
(V)
=25°C
J
1.5
=25°C
9
T
Eoff
J
GE
=25°C
6
T
=15V)
J
2
=150°C
Rectangular Pulse Duration in Seconds
0.001
10
Eon
www.microsemi.com
Er
2.5
11
Single Pulse
8
IGBT
0.01
1000
1000
35
30
25
20
15
10
800
600
400
200
800
600
400
200
5
0
0
0
0
APTGT450DA60G
0
0
V
V
R
T
Reverse Bias Safe Operating Area
Energy losses vs Collector Current
J
CE
GE
G
V
T
R
T
= 150°C
= 1Ω
0.1
GE
J
J
= 300V
= 15V
G
=150°C
100 200 300 400 500 600 700
=1Ω
0.5
= 150°C
200
=15V
Output Characteristics
V
1
GE
400
=19V
1.5
I
V
C
V
CE
CE
(A)
600
1
(V)
(V)
2
V
GE
Eoff
=15V
2.5
V
800
GE
V
=13V
GE
Eon
3
=9V
Er
1000
10
3.5
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