APTGF250A60D3G Microsemi Power Products Group, APTGF250A60D3G Datasheet - Page 3
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APTGF250A60D3G
Manufacturer Part Number
APTGF250A60D3G
Description
IGBT MODULE NPT PHASE LEG D3
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGF250A60D3G.pdf
(5 pages)
Specifications of APTGF250A60D3G
Igbt Type
NPT
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.45V @ 15V, 300A
Current - Collector (ic) (max)
400A
Current - Collector Cutoff (max)
500µA
Input Capacitance (cies) @ Vce
13nF @ 25V
Power - Max
1250W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
D3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
APTGF250A60D3G
Manufacturer:
APT
Quantity:
1 000
Part Number:
APTGF250A60D3G
Quantity:
50
Thermal and package characteristics
Symbol Characteristic
Torque
D3 Package outline
V
R
T
Wt
T
T
ISOL
STG
thJC
C
J
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
A
(dimensions in mm)
For terminals
www.microsemi.com
To Heatsink
1°
APTGF250A60D3G
Diode
IGBT
M6
M6
DÉTAIL A
2500
Min
-40
-40
-40
3
3
Typ
Max
0.21
150
125
125
350
0.1
5
5
°C/W
Unit
N.m
°C
V
g
3 - 5