APTGT100H120G Microsemi Power Products Group, APTGT100H120G Datasheet - Page 4
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APTGT100H120G
Manufacturer Part Number
APTGT100H120G
Description
IGBT MOD TRENCH FULL BRIDGE SP6
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGT100H120G.pdf
(5 pages)
Specifications of APTGT100H120G
Igbt Type
Trench and Field Stop
Configuration
Full Bridge Inverter
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.1V @ 15V, 100A
Current - Collector (ic) (max)
140A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
7.2nF @ 25V
Power - Max
480W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Typical Performance Curve
200
150
100
200
175
150
125
100
25
20
15
10
0.25
0.15
0.05
Switching Energy Losses vs Gate Resistance
50
75
50
25
5
0
0.3
0.2
0.1
0
0
0.00001
0
0
0
5
V
T
V
I
CE
C
J
GE
0.9
= 125°C
0.7
0.5
Output Characteristics (V
= 100A
0.3
0.1
T
= 600V
J
6
=15V
0.05
=125°C
Transfert Characteristics
5
Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1
T
7
J
=25°C
10
0.0001
V
8
V
CE
GE
2
(V)
T
(V)
J
=25°C
9
15
T
10
GE
J
=125°C
T
3
J
=15V)
20
=125°C
rectangular Pulse Duration (Seconds)
Eon
0.001
Eoff
11
Er
Single Pulse
www.microsemi.com
25
12
4
IGBT
0.01
240
200
160
120
200
150
100
25
20
15
10
80
40
50
5
0
0
0
0
0
0
APTGT100H120G
V
V
R
T
V
T
R
Reverse Bias Safe Operating Area
Energy losses vs Collector Current
J
CE
GE
G
J
GE
T
G
= 125°C
25
0.1
=125°C
= 3.9 Ω
=3.9 Ω
= 600V
J
= 15V
Eon
=15V
= 125°C
300
50
1
Output Characteristics
75 100 125 150 175 200
V
600
GE
=17V
V
V
CE
I
CE
2
C
(V)
1
(A)
900
(V)
V
GE
1200
3
V
=15V
GE
V
Eon
GE
=13V
=9V
Eoff
Er
1500
10
4
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