APTGF200A120D3G Microsemi Power Products Group, APTGF200A120D3G Datasheet - Page 3
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APTGF200A120D3G
Manufacturer Part Number
APTGF200A120D3G
Description
IGBT MODULE NPT PHASE LEG D3
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGF200A120D3G.pdf
(5 pages)
Specifications of APTGF200A120D3G
Igbt Type
NPT
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.7V @ 15V, 200A
Current - Collector (ic) (max)
300A
Current - Collector Cutoff (max)
5mA
Input Capacitance (cies) @ Vce
13nF @ 25V
Power - Max
1400W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
D3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Thermal and package characteristics
Symbol Characteristic
Torque
D3 Package outline
V
R
T
Wt
T
T
ISOL
STG
thJC
C
J
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
A
(dimensions in mm)
www.microsemi.com
For terminals
To Heatsink
1°
APTGF200A120D3G
Diode
IGBT
M6
M6
DÉTAIL A
2500
Min
-40
-40
-40
3
3
Typ
Max
0.09
0.16
150
125
125
350
5
5
Unit
°C/W
N.m
°C
V
g
3 - 5