APTGL475A120D3G Microsemi Power Products Group, APTGL475A120D3G Datasheet - Page 5

• Manufacturer Part Number: APTGL475A120D3G
• Description: MOSFET MODULE 4PHASE LEG D3
• Manufacturer: Microsemi Power Products Group

Specifications of APTGL475A120D3G

• Igbt Type: Trench and Field Stop
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 400A
• Current - Collector (ic) (max): 610A
• Current - Collector Cutoff (max): 5mA
• Input Capacitance (cies) @ Vce: 24.6nF @ 25V
• Power - Max: 2080W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: D3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
180
150
120
90
60
30
0.16
0.14
0.12
0.08
0.06
0.04
0.02
0
0.1
Operating Frequency vs Collector Current
0.00001
0
0
switching
Hard
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.1
0.3
0.05
120
ZCS
240
0.0001
ZVS
I
C
(A)
360
V
D=50%
R
T
Tc=75°C
J
CE
G
=150°C
=1 Ω
Diode
=600V
480
Rectangular Pulse Duration in Seconds
0.001
600
Single Pulse
www.microsemi.com
0.01
APTGL475A120D3G
800
600
400
200
0
0
0.1
Forward Characteristic of diode
0.4
T
J
=150°C
0.8
V
1.2
F
1
(V)
T
J
=25°C
1.6
2
10
2.4
5 - 5