APTGT400DU120G Microsemi Power Products Group, APTGT400DU120G Datasheet - Page 5

• Manufacturer Part Number: APTGT400DU120G
• Description: IGBT TRENCH DUAL SRC 1200V SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT400DU120G

• Igbt Type: Trench and Field Stop
• Configuration: Dual, Common Source
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 400A
• Current - Collector (ic) (max): 560A
• Current - Collector Cutoff (max): 750µA
• Input Capacitance (cies) @ Vce: 28nF @ 25V
• Power - Max: 1785W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
60
50
40
30
20
10
0.14
0.12
0.08
0.06
0.04
0.02
0
0.1
0.00001
0
0
Operating Frequency vs Collector Current
switching
Hard
0.05
0.9
0.7
0.5
0.1
0.3
ZCS
100
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
ZVS
200
0.0001
I
C
(A)
300
V
D=50%
R
T
Tc=75°C
J
CE
G
=125°C
=1.2Ω
=600V
400
0.001
rectangular Pulse Duration (Seconds)
www.microsemi.com
500
Single Pulse
0.01
APTGT400DU120G
800
700
600
500
400
300
200
100
0
0
Forward Characteristic of diode
0.1
0.4
T
J
=125°C
0.8
1.2
V
F
(V)
1
T
J
=25°C
1.6
T
Diode
J
=125°C
2
2.4
10
5 - 5