APTGF75DA60D1G Microsemi Power Products Group, APTGF75DA60D1G Datasheet - Page 2

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APTGF75DA60D1G

Manufacturer Part Number
APTGF75DA60D1G
Description
IGBT 600V 100A 355W D1
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTGF75DA60D1G

Igbt Type
NPT
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.45V @ 15V, 75A
Current - Collector (ic) (max)
100A
Current - Collector Cutoff (max)
500µA
Input Capacitance (cies) @ Vce
3.3nF @ 25V
Power - Max
355W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
D1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APTGF75DA60D1G
Manufacturer:
Danfuss
Quantity:
1 000
Part Number:
APTGF75DA60D1G
Quantity:
50
Electrical Characteristics
Dynamic Characteristics
Reverse diode ratings and characteristics
Thermal and package characteristics
Symbol Characteristic
Symbol Characteristic
Symbol Characteristic
Symbol Characteristic
Torque
BV
V
V
V
T
T
T
T
R
T
I
I
C
C
E
CE(on)
Wt
GE(th)
V
Q
T
E
CES
GES
T
d(off)
T
T
d(off)
T
T
d(on)
d(on)
ISOL
STG
thJC
res
off
ies
CES
R
C
F
rr
J
r
f
r
f
Collector - Emitter Breakdown Voltage
Zero Gate Voltage Collector Current
Collector Emitter on Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
Input Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn off Energy
Diode Forward Voltage
Reverse Recovery Energy
Reverse Recovery Charge
Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
APT website – http://www.advancedpower.com
All ratings @ T
V
V
Test Conditions
I
V
I
V
di/dt =800A/µs
I
V
di/dt =800A/µs
Test Conditions
V
V
I
V
V
Test Conditions
V
f = 1MHz
Inductive Switching (25°C)
V
V
I
R
Inductive Switching (125°C)
V
V
I
R
C
C
C
F
F
F
For terminals
GE
CE
To Heatsink
G
G
GE
GE
GE
GE
GE
GE
Bus
GE
Bus
GE
R
R
= 75A
= 75A
= 75A
= 75A
= 75A
= 75A
= 3Ω
= 3Ω
= 300V
= 300V
= 600V
= 0V
= 0V
= 0V, I
= 15V
= V
= 20V, V
= 0V, V
= 15V
= 15V
= 300V
= 300V
CE
, I
C
CE
= 500µA
C
CE
= 1.5 mA
= 25V
= 0V
j
T
T
T
T
T
T
T
T
T
= 25°C unless otherwise specified
j
j
j
j
j
j
j
j
j
= 25°C
= 25°C
Diode
= 125°C
= 125°C
= 25°C
= 125°C
= 125°C
= 25°C
= 125°C
IGBT
APTGF75DA60D1
M5
M6
2500
Min
Min
Min
Min
-40
-40
-40
600
4.5
2
3
3300
1.25
Typ
1.95
Typ
Typ
Typ
300
155
170
1.2
2.3
2.2
5.5
2.4
65
20
20
65
25
35
5
8
1
1
Max
0.35
0.66
Max
Max
2.45
Max
150
125
125
180
500
400
3.5
1.6
6.5
5
Unit
°C/W
Unit
N.m
Unit
Unit
mA
µA
mJ
µC
°C
nA
mJ
pF
V
ns
ns
V
V
V
V
g
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