APTGT100A60TG Microsemi Power Products Group, APTGT100A60TG Datasheet

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APTGT100A60TG

Manufacturer Part Number
APTGT100A60TG
Description
IGBT MODULE TRENCH PH LEG SP4
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTGT100A60TG

Igbt Type
Trench and Field Stop
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.9V @ 15V, 100A
Current - Collector (ic) (max)
150A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
6.1nF @ 25V
Power - Max
340W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute maximum ratings
RBSOA
Symbol
V
V
I
P
I
CM
CES
C
GE
D
Trench + Field Stop IGBT
G1
E1
G2
E2
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
E1
G1
VBUS
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Power Module
Phase leg
0/VBU S
Q1
Q2
0/VBUS
Parameter
G2
E2
G2
E2
VBUS
OUT
NT C2
NT C1
NTC2
NTC1
OUT
OUT
®
www.microsemi.com
T
T
T
T
T
C
C
C
C
j
= 150°C
= 25°C
= 80°C
= 25°C
= 25°C
Application
Features
Benefits
200A @ 550V
Max ratings
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Trench + Field Stop IGBT
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Internal thermistor for temperature monitoring
Stable temperature behavior
Very rugged
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
RoHS Compliant
APTGT100A60TG
600
150
100
200
±20
340
-
-
-
-
-
-
-
-
-
-
V
I
C
Symmetrical design
Lead frames for power connections
Low voltage drop
Low tail current
Switching frequency up to 20 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
CES
= 100A @ Tc = 80°C
= 600V
Unit
W
V
A
V
®
Technology
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APTGT100A60TG Summary of contents

Page 1

... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGT100A60TG V ® I Application • Welding converters NT C2 • Switched Mode Power Supplies • ...

Page 2

... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr E Reverse Recovery Energy r APTGT100A60TG = 25°C unless otherwise specified j Test Conditions 600V 25°C V =15V 100A T = 150°C C ...

Page 3

... Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP4 Package outline (dimensions in mm) See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com APTGT100A60TG R T: Thermistor temperature 25    Thermistor value at T     ...

Page 4

... Eon Gate Resistance (ohms) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.5 0.9 0.4 0.7 0.3 0.5 0.2 0.3 0.1 0.1 0.05 0 0.00001 0.0001 APTGT100A60TG =15V) GE 200 T J 175 150 125 T =150°C J 100 2.5 3 Energy losses vs Collector Current ...

Page 5

... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGT100A60TG Forward Characteristic of diode 200 ...

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